| 摘要 |
PURPOSE:To prevent an impurity region and leads from shortcircuiting with each other and a parasitic capacity from increasing in a beam lead type semiconductor device by forming a projection toward a semi-insulator basic region from the upper surface of an element on the outer peripheral edge of an insulator region to accelerate the division of the element. CONSTITUTION:An impurity layer 4 is epitaxially formed on a GaAs base 1, and the base 1 is mesa etched. In this case, a groove for forming a projection 8 is formed separated from the portion of an electrode 7. Thereafter, electrodes 7 are formed by lifting-off technique, and Au-plated. A Schottky electrode 6 is deposited. Then, it is coated with polyimide 10, baked to form the projection 8, and a window is opened at the region 10. Au/Ti is deposited to form beam electrodes 11, 12. When the base 1 is eventually mesa etched from the back surface to be individually separated since the base 1 is reduced in thickness at the projection 8, elements can be rapidly separated to complete a semiconductor device. According to this method, elements can be separated in good shape rapidly to eliminate a shortcircuit between leads and the element and a deterioration in the characteristics due to an increase in a parasitic capacity.
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