| 摘要 |
PURPOSE:To prevent a punch-through phenomenon in a insulating film breakdown incident by a method wherein an insulating film and Al electrode are laid on a semiconductor conductive region with the intermediary of a high- melting metal film, transition metal film, or high-melting silicide film and the insulating film is electrically broken down for the establishment of continuity between the semiconductor conductive region and Al electrode. CONSTITUTION:A tungsten film 10 is selectively attached to an electrode film formed on a semiconductor conductive region 2. After the attachment of an SiO2 film 3 by vapor phase growth to the tungsten film 10, an Al film is attached. The Al film is patterned into an Al electrode 5. Application of a voltage results in a breakdown of the insulating film 3 for the establishment of electrical continuity between the Al electrode 5 and conductive semiconductor region 2. The application of the voltage also results in a damaged tungsten film 10. With Al going into reaction with tungsten only with difficulty, the migration of Al is stopped by the tungsten film 10 before it reaches the semiconductor conductive region 2. |
