发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve reliability for a prolonged term under the high-temperature service status of a device by bonding a wire and an electrode under predetermined initial conditions, thermally treating the device after bonding and stabilizing a bonding junction section. CONSTITUTION:High voltage is applied between a wire 10 and a discharge electrode. Consequently, discharge is generated between the tip section of the wire 10 and the discharge electrode and an arc is formed, the tip section of the wire 10 is given heat and said tip section is melted, and the volume of the melting section is increased while a globular shape is kept. The tip of the wire and the electrode are joined through the same method as conventional methods. Various conditions, such as a temperature in the wire bonding, ultrasonic vibrations, etc., initial conditions, are set previously to conditions in which a shallow junction state in an extent that a junction section is not peeled is acquired. A device after bonding is heated, and after-treated in order to stabilize the junction section. The device is stabilized under heat-treatment conditions within a range shown in a shaded part in the graph at that time.
申请公布号 JPS62136841(A) 申请公布日期 1987.06.19
申请号 JP19850278652 申请日期 1985.12.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 MACHIDA KAZUMICHI;HIROTA SANEYASU;SHIMOTOMAI MASAAKI;OMAE SEIZO
分类号 H01L21/60 主分类号 H01L21/60
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