发明名称 Method of bonding crystalline silicon bodies
摘要 A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.
申请公布号 US4671846(A) 申请公布日期 1987.06.09
申请号 US19840641207 申请日期 1984.08.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIMBO, MASARU;FUKUDA, KIYOSHI
分类号 C04B37/00;B23K20/24;C30B29/06;C30B33/00;C30B33/06;G01L9/00;H01L21/02;H01L21/18;H01L21/20;H01L21/304;H01L27/12;(IPC1-7):H01L21/306 主分类号 C04B37/00
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