| 摘要 |
PURPOSE:To improve the CN ratio of the titled memory by using a recording medium consisting essentially of a Te oxide and added with the specified amt. of one kind among Ga, Ge, and As and of one kind among In, Sn, and Sb, and forming the medium by a sol-gel method using the alkoxide of the elements. CONSTITUTION:The optical memory is composed of a substrate 1, a recording medium 2, and a spacer 3. The medium 2 consisting essentially of a Te oxide and added with 1-10%, for example, of one kind among Ga, Ge, and As and 10-20% of one kind among In, Sn, and Sb is used. The medium 2 is formed by a sol-gel method using the alkoxide of the Te, Ga, Ge, As, In, Sn, and Sb. Consequently, the uniformity of the composition and thickness of the recording film can be easily satisfied only by controlling the soln. concn., dipping speed, and spinner speed, and the CN ratio can be enhanced. |
