发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 <p>PURPOSE:To take a large position detecting distance regardless to the spot diameter of a signal light by a method wherein the anode of the 1st photodetecting cell and the anode of the 2nd photodetecting cell of a position detecting photodetector are formed into comb shapes of being incorporated by each other. CONSTITUTION:The anode 11a of the P-type diffused photodetecting cell of the 1st channel and the anode 11b of the photodetecting cell of the 2nd channel are formed on an N-type or I-type cathode substrate 2. The anodes 11a and 11b have comb shapes composed of various long and short rectangulars which are incorporated by each other. If a signal light is at the center position L/2, as the ratio of the 1st channel photodetecting cell to the 2nd channel photodetecting cell is 1, the output current ratio is I1/(I1+I2)=50%; if L/4, I1/(I1+I2)=80% and if 3L/4, I1/(I1+I2)=20%. Therefore, the position can be detected by a function close to a stair-shape.</p>
申请公布号 JPS62123784(A) 申请公布日期 1987.06.05
申请号 JP19850262756 申请日期 1985.11.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAMEDA HIDEO
分类号 H01L31/16;G01C3/00;G01C3/06 主分类号 H01L31/16
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