| 摘要 |
PURPOSE:To obtain the semiconductor layer of alpha-type silicon carbide and the like having excellent crystallizability which can be crystallized at the temperature of 1,100 deg.C or above without inflicting advance effect on characteristics by a method wherein an insulating substrate, having a sapphire substrate, the whole surface of which is coated with a spinel layer, is used. CONSTITUTION:A single crystal magnesium oxide 2 is coated on the whole surface of a sapphire substrate 1, the Al2O3 of a sapphire substrate material and the MgO of the magnesium film 2 generate a solid-phase reaction when a heat treatment is performed in an oxygen atmosphere. A spinel layer (MgO.Al2O3) 3 is formed between the substrate 1 and the magnesium oxide film 2. A silicon carbide semiconductor layer of 0.3-50mum in thickness is formed on the insulated substrate to be used for a semiconductor coated with a spinel layer by heating up the substrate to the temperature range of 1,200-2,000 deg.C. The formed silicon carbide epitaxial layer 4 is alpha-type, there is no possibility of generation of contamination such as Al, oxygen and the like coming from the sapphire substrate, and the layer 4 shows excellent electric characteristics and crystallizability.
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