| 摘要 |
PURPOSE:To improve the integration of an element by providing a capacity increasing portion which extends in a depthwise direction of a substrate to increase a capacity between a control gate and a floating gate. CONSTITUTION:An N-type semiconductor substrate 10, an N-type source 20 and an N-type drain 30 formed separately in a P-well formed on the surface of the substrate 10, a channel region formed between the source 20 and the drain 30, a floating gate 50 covered through an insulating film on the channel region, and a control gate 60 covered through an insulating film above the gate 50 are composed. The gate 50 and the control gate 60 are integrally formed with channel opposed portions covered on the channel regions, and composed of capacity increasing portions 53, 63 extended in a plate shape in the depthwise direction of the channel regions and a channel stopper 70. |
