发明名称 |
SILICON-BASED SEMICONDUCTOR DEVICES |
摘要 |
<p>A new silicon based semiconductor device comprises a layer of amorphous silicon in which the density of energy states in the energy gap has been reduced by hydrogenation; this layer is associated with a layer of a hydrogen-containing substrate material that can supply hydrogen in atomic form to the amorphous silicon. In processes of the invention the silicon layer and a substrate layer are hydrogenated separately to permit optimum hydrogenation; the silicon layer may be deposited without hydrogenation and hydrogenated subsequently with hydrogen from the substrate material. A specific example consists of a layer of hydrogenated amorphous silicon of about 1 micrometer thickness deposited on a hydrogen-containing chromium layer which is itself deposited on a carrier, the silicon then forming the active element of a photovoltaic cell particularly functional as a solar cell.</p> |
申请公布号 |
CA1157963(A) |
申请公布日期 |
1983.11.29 |
申请号 |
CA19810379742 |
申请日期 |
1981.06.15 |
申请人 |
GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO (THE) |
发明人 |
ZUKOTYNSKI, STEFAN;MA, KI B.;PERZ, JOHN;SZADKOWSKI, ANDRZEJ;YACOBI, BEN-GUR |
分类号 |
H01L21/30;H01L29/16;H01L31/0376;H01L31/20;(IPC1-7):H01L31/04 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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