| 摘要 |
PURPOSE:To increase the density of integration, and to prevent breaking at a stepped section of an upper-layer wiring layer by heating and softening silicate glass containing an impurity selectively formed on a semiconductor base body through an insulating layer, forming the edge section of the silicate glass to a gentle shape and forming a semiconductor element region. CONSTITUTION:An silicate glass film 3 containing an impurity is shaped on an Si semiconductor base body 1 through an insulating layer 2. The surface is etched selectively, the surface of the exposed substrate 1 is thermally oxidized to form a protective film 4, and the edge sections of the silicate glass films 3 are formed to a gentle shape through heat treatment. An oxide, a gate film 7 and a polycrystalline Si layer are formed to the exposed surface, and the polycrystalline Si layer is patterned to shape a gate electrode 8. Source and drain regions 9, 10 are formed through ion implantation, and impurity ions are activated through heat treatment. An SiO2 insulating layer 11 is shaped to the surface, electrode windows are bored selectively to the source region and the drain region, and a wiring 12 is formed to a required pattern. |
