| 摘要 |
PURPOSE:To effectively write information of '1' level, '0' level in memory cells by writing data according to whether a drain region is connected with an aluminum layer to become a data line or not. CONSTITUTION:Data is written in an MOS transistor for each memory cell according to whether a drain region 27 is connected with an aluminum layer 34 to become a data line or not. Thus, the withstand voltage characteristic of the transistor is not deteriorated by high impurity density of the surface of a substrate, and data of '1' level, '0' level can be effectively written. Since the positioning in case of connecting a polycrystalline silicon layer 31 with the layer 34 formed on the layer 31 is decided by the relative position, the formation of a contacting hole is not required, the excess size of presuming the displacement in case of positioning can be eliminated to perform high density of memory cells. |
