发明名称 MOS SEMICONDUCTOR MEMORY CIRCUIT
摘要 <p>PURPOSE:To reduce power consumption by providing a latch circuit temporarily holding an output signal in the state where the 2nd switch is turned on based on a clock signal and connecting the 1st and 2nd switches to the 2nd signal line. CONSTITUTION:When address signals AD1-ADF change to cause the clock signal phi at a level H, MOSQA1-MOSQAM and QB1-QBN are turned on. When the clock signal phi comes to a level L after a certain period, the MOSQA 1-MOSQAM and the QB1-QBN are turned off, and a current does not flow to loads MOSQL1-MOSQLM and QPL-PQN. When the clock signal phi comes to a level L, reading action is not prevented, because data is held while a memory circuit 14 is reading data on bit lines O1-ON at a level H. Thus a power source current flows only when the address signal changes, and does not flow in other cases, whereby power consumption can be substantially reduced.</p>
申请公布号 JPS6238595(A) 申请公布日期 1987.02.19
申请号 JP19850178970 申请日期 1985.08.14
申请人 OKI ELECTRIC IND CO LTD 发明人 NAKAYAMA TAKASHI
分类号 G11C17/00;G11C11/407;G11C11/408;G11C11/417 主分类号 G11C17/00
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