| 摘要 |
PURPOSE:To decrease the speed of discharged gas in a short period of time for shortening the time required for obtaining a pressure as required, and to improve the productivity, by providing a semiconductor manufacturing apparatus with an electron generator for the purpose of decreasing the discharged gas. CONSTITUTION:A container 2 is evacuated to 10<-2>Pa or below with a vacuum exhaust system 1. In order to apply electrons onto the wall faces of the container 2, a thermionic cathode 3 is heated by a heating power supply 4 and the potential of the thermionic cathode 3 is turned negative by means of an accelerating power supply 5. Thermoelectrons are thereby caused to fly out of the heated thermionic cathode toward the walls of the container 2, causing the gas on the wall faces to eliminate. Thus, the electron radiation allows the speed of discharge gas to be decreased, as represented by the solid line 22, in a period of time corresponding to one third of the period of time required in the case where only a simple vacuum evacuation is performed as represented by the dotted line 21.
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