| 摘要 |
PURPOSE:To weaken field intensity at the end sections of a wafer, to offset the temperature rise in the vicinity of the end sections of the wafer resulting from an adiabatic effect and to equalize distribution in the wafer of a sheet treatment type etching rate by constituting an upper electrode to a projecting shape toward a lower electrode on which the wafer is placed. CONSTITUTION:An upper electrode 3 is deformed to a projecting shape to the wafer 2 side, and an inter-electrode distance dc at a central section is made smaller than an inter-electrode distance dp at end sections. Consequently, an electric field Ec between upper and lower electrodes in a central region of a wafer is made smaller than that Ep in a wafer-end region and Ec>Ep is formed. Accordingly, the impact energy of ions, etc. in the vicinity of the central region in the wafer is made smaller than that in the vicinity of the end sections of the wafer, and the effect of the temperature rise of the end sections of the wafer by the impact energy is made lower than that at the central section. However, uniform temperature distribution is obtained on the front of the wafer because an adiabatic effect at the end sections of the wafer is displayed so as to elevate a temperature in the vicinity of the end sections of the wafer. |
