| 摘要 |
PURPOSE:To provide lead material for semiconductor devices with excellent heat resistance by specifying the content of Sn, P, and Mg in a Cu alloy. CONSTITUTION:The lead material for semiconductor device is constituted of a composition consisting of, by weight, 0.5-5.0% Sn, 0.01-0.1% P, 0.01-0.15% Mg and the balance Cu with inevitable impurities. This lead material is superior in strength and characteristic of heat radiation to conventional phosphor bronze material and further it excels in heat resistance, so that it is useful as lead material for semiconductor devices having a high degree of integration. Moreover, it also excels in plating suitability and solderability to Au, Ag, Ni and their alloys. |
