发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To raise the utilization factor of the substrate by a method wherein the second graduated scale is formed in such a way that each grooved strip of the second grooved strip row for graduation constituting the second graduated scale is formed in a depth not to reach the substrate. CONSTITUTION:A mask 12 for processing is formed in such a way that the grooved strips for graduation C-2, C-1, C0, C1 and C2 of a grooved strip row 10 for graduation constituting a graduated scale 11, which is formed in the mask 12 for processing, are formed in a depth not to reach a substrate 1. Therefore, as long as the width of the rectangular pattern of the exposure mask to be used at the time of exposure treatment to a photo resist layer 8 is made narrower compared to the case in the conventional method, that will do. When the same mask for processing as the mask 12 for processing is again formed, the graduated scale in that case can be formed in the region of the mask 12 for processing, wherein the graduated scale 11 is formed, as a graduated scale to cowork with a graduated scale 7. Accordingly, the areas of the graduated scales, which occupy on the substrate 1, are not increased.
申请公布号 JPS61190939(A) 申请公布日期 1986.08.25
申请号 JP19850031255 申请日期 1985.02.19
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KATO NAOKI;MAKIMURA TAKASHI
分类号 H01L21/027;G03F7/20;H01L21/30;H01L21/66 主分类号 H01L21/027
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