| 摘要 |
<p>PURPOSE:To reduce leakage currents while decreasing the wirings of source electrode wirings and drain electrode wirings by burying a thin-film field-effect transistor section except source and drain electrodes into a light-transmitting insulating film. CONSTITUTION:A gate electrode 2, a gate insulating film 3, a semiconductor thin-board 4 and a passivation film 5 are deposited on a light-transmitting insulating substrate 1. A photosensitive resin film 9 is formed selectively, and the passivation film 5, the semiconductor thin-film 4, the gate insulating film 3 and the gate electrode 2 are wet-etched in succession while using the film 9 as a mask. An silicon nitride film 8 is deposited while leaving the photosensitive resin film 9 and lifted off, the passivation film 5 is etched selectively and a contact hole is bored, ITO is applied and shaped onto the whole surface, and a source electrode 6 and a drain electrode 7 are formed through selective etching. Accordingly, no stepped section is generated even when the gate electrode is thickened and the insulating film is thinned, thus preventing the disconnection of source-drain electrode wirings.</p> |
