| 摘要 |
PURPOSE:To widen allowance at reading information, compared with a conventional superconductor information memory device by setting a superconductor layer having less force for generating Abricosoph flux quantum to the electrode of the Josephson coupled element of an information reading means and disposing it. CONSTITUTION:On the superconductor layer 2 of an information memory means 1, the superconductor layer 32, which has the weak force for generating Abricosoph flux quantum due to a magnetic field, compared with the superconductor layer 2 of the information memory means 1, or will not generate said quantum, is formed, and the Josephson coupled element 22 of the information reading means 21 employs the superconductor layer 32 as one electrode. When the superconductor layer 2 of the information memory means 1 holds Abricosoph flux quantum by itself, said quantum does not exist under the tunnel barrier layer 25 of the Josephson coupled element 22 of the superconductor layer 2 or exists weakly. This can apply under the tunnel barrier layer 25 of the superconductor layer 32, and accordingly information is stored in the information memory means and can be read out.
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