| 摘要 |
PURPOSE:To enable a chnage into multilayers by heat-bonding a substrate, to which a semiconductor integrated circuit is formed, with another semiconductor substrate, insulator substrate or substrate, to which a semiconductor integrated circuit is shaped, through an insulator. CONSTITUTION:Substrates 101, 102 to which MOS type integrated circuits are formed are prepared, and insulator layers 113, 114 used as adhesives are deposited. The surfaces on which the insulator layers 113, 114 are deposited are brought into contact mutually, and thermally and both substrates are bonded mutually. Accordingly, an integrated circuit device having high density is obtained, and operation at high speed is enabled because wiring distances are shortened. |
