ETCHING METHOD AND APPARATUS THEREFOR

摘要

PURPOSE:To carry out etching at a uniform etching rate by dry-treating the surface of a resist pattern formed on the surface of a material to be treated to enhance the affinity for an etching soln. before the surface of the material is treated with the etching soln. CONSTITUTION:An etching soln. is brought into contact with the surface of a material to be treated to each the part of the surface of the material not covered with a resist pattern formed on the surface of the material. At this time, the surface of the resist pattern is treated with plasma or irradiated with ultraviolet rays in an atmosphere contg. oxygen to enhance the affinity of the surface for the etching soln. before the surface of the material is treated with the etching soln.