| 摘要 |
PURPOSE:To enable a fixed amount of input charges to be obtained even when the substrate potential of an input diode varies to some degree, by a method wherein the substrate potential under the input gate of the titled device is made up of the first potential and the second potential positioned in the transfer direction and deep. CONSTITUTION:The surface of a semiconductor substrate 21 that corresponds to part of an input gate 26 is provided with an impurity layer 23 with a concentration different from that of this substrate 21. The impurity layer 23 is so constructed that the second potential 30 is positioned more in the transfer direction and deeper than the first potential 29 under the input gate 26 which does not form the impurity layer 23. The amount of input signal charges can be kept fixed even when the substrate potential 31 of an input diode 22 varies to Vpw1-Vpw2. Use for the solid-state image sensor is effective in the input of a small amount of bias charges for transfer efficiency. |
