摘要 |
PURPOSE:To prevent entrance of capacity coupling noise from a Y address signal line in sensing period and make a sense amplifier highly sensitive by driving a decoder circuit after rising of an activating signal of the sense amplifier. CONSTITUTION:In the sense amplifier 10 of a D-MOSRAM, an RAS' signal becomes from H to L, and an X address buffer 1 is activated, and each signal having Y address time series and sense time series is generated by trigger of rising of an X address signal 2, and one signal is given to a delay circuit 5. An output of an AND gate 5b becomes from L to H when the condition that makes the delay circuit 5 and its output PHI1 from L to H and the condition that makes a CAS' signal from H to L and the condition that makes a slow sense signal PHIS1 of output of a sense amplifier driving circuit 7 from L to H are satisfied. A Y address buffer 4 is activated making the output a trigger.
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