发明名称 |
DISPOSITIVO SEMICONDUTTORE,METODO DI FABBRICAZIONE DELLO STESSO,TUBO PER TELECAMERA E DISPOSITIVO DI VISUALIZZAZIONE INCORPORANTI TALE DISPOSITIVO SEMICONDUTTORE |
摘要 |
The invention relates to a semiconductor, cathode and a camera tube and a display tube, respectively, having such a cathode, based on avalanche breakdown in a p-n junction extending parallel to the surface of the semiconductor body. The released electrons obtain extra energy by means of an accelerating electrode provided on the device. The resulting efficiency increase makes the manufacture of such cathodes in planar silicon technology practical. Since the depletion zone of the p-n junction upon avalanche breakdown does not extend to the surface, the released electrons show a sharp, narrow energy distribution. This makes such cathodes particularly suitable for camera tubes. In addition they find application, for example, in display tubes and flat displays. |
申请公布号 |
IT1131955(B) |
申请公布日期 |
1986.06.25 |
申请号 |
IT19800023378 |
申请日期 |
1980.07.10 |
申请人 |
PHILIPS GLOEILAMPENFABRIEKEN NV |
发明人 |
HOEBERECHTS ARTHUR MARIE EUGENE;GORKOM GERARDUS GEGORIUS PETRUS VAN |
分类号 |
B01J23/86;C07B61/00;C07C1/00;C07C1/04;C07C67/00;H01J1/308;H01J9/02;H01J29/04;H01J31/12;H01J31/38 |
主分类号 |
B01J23/86 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|