| 摘要 |
PURPOSE:To prevent electrostatic breakdown, and to reduce leakage currents by directly coupling an output section from a buffer circuit, to which a MOS transistor is connected in series, by an output terminal and an Al wiring layer and connecting a diffusion layer for the output section and the Al wiring layer through a polycrystalline silicon layer. CONSTITUTION:N type regions 2, 3, 4, 5 are diffused and formed to a P type substrate 1, and polycrystalline silicon 6, 7 are grown at positions as gates for transistors Tr1 and Tr2. Junction sections 14, 15 among the diffusion regions 3, 4 and polycrystalline silicon layers 16, 17 are also shaped onto the diffusion regions at the positions of a source electrode for the transistor Tr1 and a drain electrode for the transistor Tr2 at that time. Junction sections are also shaped to the sections of opening sections 8, 9, 10, 11, 12, 13, and circuit-connected aluminum wiring layer. Accordingly, even when electrostatic breakdown voltage is applied from an output terminal OUT, the polycrystalline silicon layers 16, 17 are held, thus preventing junction breakdown to the substrate from the diffusion. Leakage to the substrate can also be obviated. |
