| 摘要 |
PURPOSE:To contrive the improvement in photoelectric characteristics of the titled element by a method wherein the Fermi level of a P-layer is made shallowest in the photo-permeable conductive film side and deepest in the I-layer side, in this element made of amorphous with the structure of glass substrate - photo-permeable conductive oxide film - PIN layers - metallic electrode. CONSTITUTION:The doping ratio at each point of the P-layer 3 is made highest in the photo-permeable conductive film TCO2 side and lowest in the I-layer 4 side. Since the doping ratio of the P-layer 3 is made to have gradient, the Fermi level is shallowest in the TCO2 side and deepest in the I-layer 4 side. It follows that the valence band of the P-layer 3 is lowered in its I-layer 4 side by a factor of the inclination of its Fermi level: in an operated state, the Fermi level of the P-layer 3 is lifted up in the I-layer 4 side as shown by a two-dot chain line, and the valence band of the P-layer 3 is lifted up in the I-layer 4 side as shown by a broken line. However, the level of the valence band in the I-layer 4 side does not become higher than the level in the TCO side, and so the inhibition of recombination of holes of the P-layer 3 with electrons of the TCO2 can be prevented. |
