Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites

摘要

A method of fabricating integrated circuits on a semiconductor substrate includes the steps of directing electromagnetic radiation onto the semiconductor substrate at a small angular offset from the substrate's Bragg angle; measuring the intensity of the radiation that is reflected from the semiconductor substrate at the offset; and continuing with the fabrication of circuits on the substrate only if the measured intensity is substantially larger than the intensity which would reflect at the same angular offset from a defect-free crystal of the substrate material.