| 摘要 |
PURPOSE:To obtain a photoelectric conversion device, which deteriorates little to light irradiation, by a method wherein the prescribed non-single crystal semiconductor, second electrode, is superposed on the first electrode on the insulating substrate and an annealing is performed on the first electrode using a pulse-status strong light having the prescribed wavelength through the second light-transmitting electrode. CONSTITUTION:A non-single crystal semiconductor layer 3 having a p-i-n junction and being added H or halogen therein is superposed on electrodes 15 formed by isolating an ITO film 2 on qa glass plate 1 by grooves 13. The layer 3 is isolated by a groove 14 away by 100mum to the left from the groove 13, and a surface conductive film 5 and a coupling part 10 are provided. The groove 14 is formed by performing a laser processing. Then, a photo annealing is performed on the layer 3 using a strong light (YAG laser pulse) 25 having a wavelength of 500nm or more, and at the same time, the crystallization of the (i) layer is promoted with the strong light 25 to make the deterioration of the layer 3 due to light irradiation reduce, and furthermore, to make spreading of a depletion layer extend into the (i) layer. According to this constitution, even though the (i) layer is made thicker to 2mu or thereabouts, the deterioration of the layer 3 due to light irradiation is little and the photoelectric conversion current is increased. After this, the whole surface is covered with an Si3N4 protective film 21 and the photoelectric conversion device is completed. |
