| 摘要 |
PURPOSE:To prevent a crack from generating in an insulating layer at the time of bonding a fine metal wire by a method wherein polycrystalline Si layers are provided in close to the sides of a bonding pad, which is formed on the semiconductor substrate. CONSTITUTION:A bonding pad 3 is provided on an insulating layer 2 formed on a semiconductor substrate 1, and moreover, polycrystalline silicon layers 6 are provided in such a way as to adhere closely to the sides of the bonding pad 3. Surface protective films 4 are formed in such a way as to cover both of the pad 3 and the layers 6 excluding parts, whereon a fine metal wire 5 is performed. Moreover, the fine metal wire 5 is connected to the exposing part of the pad 3 for connecting the leads of a container and this pad 3. By constituting in such a structure, even if the fine metal wire 5 should be bonded spreading over into both of the exposing part of the pad 3 and the part other than the exposing part, the step difference of the films 4 is reduced, and moreover, the layers 6 absorb pressure to generate at the time of bonding the fine metal wire 5 and a crack can be prevented from generating in the layer 2. |
