| 摘要 |
PURPOSE:To prevent the contamination alkali metal and to obtain a cover protecting film, in which cracks are hard to occur and through which moisture does not pass, by providing an insulating film and a polycrystalline silicon film or amorphous silicon film as a cover film on a semiconductor substrate, on which circuits are formed. CONSTITUTION:A PSG film 19 is formed on an Al wiring 18 for an MOS transistor to the film thickness of 1,000-5,000Angstrom . Then a polysilicon film or an amorphous silicon film 20 is formed on the PSG film 19 to the film thickness of 1,000-5,000Angstrom . After patterning, a PSG film 21 is grown continuously to the film thickness of 1,000-5,000Angstrom . The PSG film on the Al wiring 18 is removed. Then, the polysilicon film or the amorphous silicon film is surrounded by the PSG film, and the excellent cover film can be obtained. |
