| 摘要 |
PURPOSE:To make the distribution of avalanche multiplication factor uniform by a method wherein the same crystal layer as a multiplication layer is formed by the second crystal growth, and next a p-n junction is set up by forming an impurity region coming from the surface into the multiplication layer. CONSTITUTION:An n type InP buffer layer 2, an n type InGaAs photo absorption layer 3, an n type InGaAsP acceleration layer 4, an n type InP field control layer 5 and the n<-> type InP multiplication layer 6 are successively grown on an n<+> type InP substrate 1 by applying liquid phase epitaxial growth. The layers 6 an 5 are mesa-etched. The crystal layer melted back by the second liquid phase epitaxial growth is the surface of the layer 6. No matter how this surface comes rough, it becomes part of the p<+> type InP light receiving region 7 when the titled element is completed, becomes a part with no application of electric fields, and is not contributed to the distribution of multiplication factor.
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