| 摘要 |
PURPOSE:To facilitate the positioning of a photomask accurately and to improve the yield by partly selectively removing a resist film on mask positioning marks of a substrate to expose the mark, and then patterning them. CONSTITUTION:The first photomask 26 for exposing only a thick resist film 25 portion on a mask positioning reference mark 22 of a substrate 21 is disposed on a thick resist film 25, exposed, developed, the film 25 on the mark 22 of the substrate 21 is partly removed selectively to expose the mark 22. Then, the second photomask 27 having the prescribed pattern is disposed on the film 25. At this time since the thick film 25 is not interposed between the mark 22 on the substrate 21 and a positioning mark 28 of the photomask 27, the mark 22 on the substrate 21 can be freshly observed visually, thereby extremely readily bringing the both marks in coincidence. |
