| 摘要 |
PURPOSE:To form a conduction type layer having low resistance while annealing only a layer extremely near to a surface layer by thermally treating a semiconductor film containing amorphous silicon phase in a short time by using an ultraviolet laser having a short wavelength. CONSTITUTION:A gate electrode 11 is formed on a glass substrate 1, and an SiO2 film 12 and an n type amorphous silicon film 13 are shaped through a plasma CVD method. Source and drain electrodes 14 and 15 are evaporated, and a laser 7 is projected from the lower section of the substrate 1. An ultraviolet laser, a wavelength thereof extends over 300nm or less and intensity of irradiation thereof extends over 0.2J/cm<2> or less, is employed as laser beams 7. The amorphous silicon films of the lower section of the source and drain electrodes 14, 15 are property-changed into an silicon film 16 containing a crystalline substance. |
