| 摘要 |
PURPOSE:To suppress admixture of impurities from a heating element during pulling of single crystal and growth, by providing the top part of a crubible to put raw material melt and liquid capsuling agent with a tapered pipe of a specific shape. CONSTITUTION:The crucible 3 held by the crucible supporting container 2 is put in the high-pressure container 1 pressurized with an inert gas, and the tapered pipes 5 having the fins 4 at the outer wall and taper widening upwards are set at the top of the crucible 3. The single crystal raw material 7 and the capsuling agent 8 are put in the crucible 3, heated by the carbon resistance heating element 6, and melted. The seed crystal 10 attached to the tip of the pulling shaft 9 is immersed throught the liquid capsuling agent 8 in the raw materal melt 7, and pulled up while rotating the shaft 9, to form the single crystal 11. Consequently, single crystal having <=5X10<15>/cm<3> carbon impurity cncentration is obtained. |
