发明名称 PLASMA ETCHING METHOD
摘要 PURPOSE:To prevent an irregular etching by increasing the interval of wafers disposed in parallel with each other in a gas injection vessel at the center in the arraying direction and decreasing toward both ends. CONSTITUTION:A plurality of wafers 3 in a barrel (not shown) filled with gas are stood on a boat 4. The wafers 3 are disposed as a pair by bonding back- to-back with a set of two, and the pairs are disposed in parallel. Further, the interval L of the wafers 3 is largest at the interval L1 of the central portion A of the arraying direction, smallest at the interval Ln of the both ends B, C, and sequentially decreases toward the ends. After the boat 4 is contained in the barrel, it is evacuated in vacuum, gas is then filled, high frequency power is applied to the electrode at the periphery of the barrel, thereby plasma etching it. Thus, the irregular etching can be prevented.
申请公布号 JPS60175423(A) 申请公布日期 1985.09.09
申请号 JP19840031091 申请日期 1984.02.20
申请人 ROOMU KK 发明人 KADONISHI YUTAKA
分类号 C23F4/00;H01L21/302;H01L21/3065 主分类号 C23F4/00
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