| 摘要 |
PURPOSE:To prevent the yield of cracks at the step part of an interlayer insulating film, by providing a round part at the end part of a patterned wiring layer by the combination of isotropic etching and anisotropic etching. CONSTITUTION:On a semiconductor substrate 1, an insulating film 2, a first wiring layer 3 and a patterned etching mask 6 are sequentially laminated. Isotropic etching is performed by wet etching. The etching is stopped before the layer 3 is separated and patterned. After the mask 6 is removed, anisotropic etching is carried out by dry etching until the layer 3 is complately separated and patterned. After the patterned layer 3 is formed in this way, an insulating layer 4 is formed on the entire surface of the element. |
