| 摘要 |
PURPOSE:To obtain a semiconductor device having high reliability by securing a semiconductor pellet onto an insulating base, surrounding it with a dam, filling resin in a cavity formed in the dam, and then coating the dam with a flat plate- shaped cap, thereby sufficiently forming the bonding area of the base with the dam. CONSTITUTION:A wiring pattern 10A is coated while facing a semiconductor element secured onto a base 10 made of glass epoxy resin, and the end is extended to the back surface of the base 10. Then, an element 11 is secured onto the base with an adhesive 11A such as silver brazing, and wiring electrodes provided at the element are connected with a pattern 10A by wirings 11b. Then, a dam 12 is disposed at the outside including the ends of the element 11, the wirings 11B and the pattern 10A, and bonded on the pattern 10A with an organic adhesive 13. Subsequently, silicone resin 14 is filled in the cavity 15 formed by the dam 12, and the dam 12 is coated with a flat plate-shaped cap 15 through an organic adhesive 17. |
