| 摘要 |
<p>High purity Si is made by creating an electric arc in an axial gap between two electrodes in a chamber and feeding H2 and/or an inert gas into the gap to form a long arc extending into a reactor; and H2 is fed into the arc. Silicon halide is fed into the arc in the reactor to form prods. including molten Si and hydrogen halides, the Si flowing downwards into a container so it is sepd. from the gaseous reaction prods. Three arcs are pref. employed, each in a chamber located on the periphery of the reactor, the three chambers being sepd. from each other; and a silicon halide may also be fed into the arc gaps between with the H2 and/or the inert gas. Provides low cost mass prodn. of Si for solar cells.</p> |
