| 摘要 |
PURPOSE:To enable to easily make shorter the channel length of a thin film transistor without needing a microscopic working technique by a method wherein the channel length is decided by only the thickness of a semiconductor thin film. CONSTITUTION:A gate electrode 5 and a gate insulating film 4 are formed on an insulating substrate 10. A first main electrode region 1 including a first conductive film, which is used as a source or a drain, is insularly formed. One end part of the first main electrode region 1 is provided on one end part of the gate electrode 4 or on the gate electrode 4. An a-Si film 3 and a second conductive film 2 are continuously deposited, a patterning is performed on the films 3 and 2 in the same form and a channel region and a second main electrode region are formed. The a-Si film 3 and the second conductive film 2 are partially superposed with the first main electrode region 1 and are extendedly provided on both of one side surface of the first main electrode region 1 and the surface of the gate insulating film 4 (gate electrode 5). The thickness of the a-Si film 3 is selected thinner than the insular height of the first main electrode region 1. This thickness selected in such a way simultaneously results in deciding the channel length of this thin film transistor. At need, an insulating film 6 is deposited on the whole surface and after a contact hole was opened on each region, this transistor is completed by performing a source wiring 21, a drain wiring 22 and a gate wiring. |
