| 摘要 |
PURPOSE:To improve the photoconductivity and durability by forming the 1st layer consisting of the 1st amorphous layered region contg. Ge or further contg. Si and the 2nd layered region made of photoconductive amorphous Si and the 2nd layer contg. Si and C on a support and by incorporating O into the 1st layer. CONSTITUTION:The 1st amorphous layered region 104 contg. Ge or further contg. Si and the 2nd layered region 105 made of photoconductive amorphous Si contg. no Ge are successively laminated on a support 101 to form the 1st layer 102. Ge in the region 104 is uniformly distributed, or the concn. of Ge is gradually lowered from the support 101 side toward the opposite side. The concn. of Ge in a direction parallel to the surface of the region 104 is uniform. The layer 102 contains O at different concns. c1, c3, c2 from the support side, and c3>c2, c1. The layer 102 further contains H and/or halogen. The 2nd amorphous layer 103 contg. Si and C is then formed on the layer 102. A photoconductive member 100 having high sensitivity even to light of longer wavelengths and superior durability and giving an image of high quality is obtd. The layer 104 has high adhesive strength to the support 101. |
