| 发明名称 |
Process for forming conductive through-holes through a dielectric layer |
| 摘要 |
A conductive through-hole hole is formed through a dielectric sandwiched between conductors by forming a noncircular hole in a conductor, etching a hole through the dielectric and by deforming at the conductor which has been undercut during the etching.
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| 申请公布号 |
US4517050(A) |
申请公布日期 |
1985.05.14 |
| 申请号 |
US19830558307 |
申请日期 |
1983.12.05 |
| 申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
JOHNSON, DANIEL D.;FRITZ, HERBERT L. |
| 分类号 |
H05K3/00;H05K3/40;(IPC1-7):B44C1/22;C03C15/00;C03C25/06;C23F1/02 |
主分类号 |
H05K3/00 |
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