| 摘要 |
PURPOSE:To control the direction of a crystal face of a semiconductor layer, to which a second layer transistor is formed, positively by forming the semiconductor layer as a substrate for the second layer transistor by recrystallization using a substrate for a first layer transistor as a seed. CONSTITUTION:A field oxide film 21, a gate oxide film 22, an oxide film mask 24, an n type source region 25, a gate region 26 and a drain region 27 are shaped to the surface of a p type silicon substrate 20, thus constituting a first layer n type MOS transistor. A silicon oxide film 29 is laminated, a window is bored, a polysilicon layer is laminated, a laser, etc. are projected, and a single crystal with a crystal face determined by a crystal face in the silicon substrate 20 is grown while using a window bored section in the substrate 20 as a seed. A single-crystallized region 31 is patterned, and employed as a second layer semiconductor layer, and a gate oxide fiom 32 is shaped. A drain 36, a source 37 and a gate 38 for a second layer p type MOS transistor 35 are formed while using the region 31 as a substrate. |
