发明名称 PLASMA PROCESSOR
摘要 PURPOSE:To make an oxidation reaction and a nitrification reaction to be performed by active radical particles without applying a voltage to a substrate to be processed, and to form an insulating film having small irradiation damage according to charged particles, and moreover having a favorable interface characteristic by a method wherein an electron cyclotron resonance phenomenon is utilized. CONSTITUTION:The microwaves of 2.4GHz generated from a magnetron 31 are conducted to a discharge tube 33 manufactured of quartz by a waveguide 32, and gas introduced in the discharge tube from a gas introducing tube 34 is made to perform electric discharge. An air-core coil is arranged outside of the discharge tube thereof, and when electric discharge is performed, a magnetic field is formed in parallel with the discharge tube. Plasma 36 generated at the discharge part is transported up to a substrate 38 to be processed in the condition shut up to the control part of the reaction tube according to the magnetic field formed by the coil. Accordingly, generation of a reaction between plasma and the tube wall is small, and to make contaminants existing on the tube wall to be taken in plasma, and to contaminate the substrate to be processed is reduced. Moreover, to advance the reactions of oxidation and nitrification without applying a voltage to the sample, because it is necessary to heat the substrate to be processed, a resistance heating furnace 39 is arranged inside of the air-core coil, and moreover a cooling means 40 is provided to prevent the air-core coil from damage according to heat.
申请公布号 JPS6070730(A) 申请公布日期 1985.04.22
申请号 JP19830177960 申请日期 1983.09.28
申请人 HITACHI SEISAKUSHO KK 发明人 KIMURA SHINICHIROU;MIYAKE KIYOSHI;KETSUSAKO MITSUNORI
分类号 H01L21/31;H01L21/314 主分类号 H01L21/31
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