发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To abate noises by a method wherein the effective refractive index at the central part of a current injection region is made higher along one direction of the P-N junction face of an active layer and the high-resistance current injection region is formed in the vertical direction to the direction. CONSTITUTION:A groove part 2 is formed in a substrate 1, and a clad layer 3, an active layer 4, a clad layer 5 and a cap layer 6 are successively formed. According to such a way, a distribution of effective refraction index, which is higher at the groove part 2 of the substrate 1 and is lower on both sides thereof, is formed along the P-N junction face of the active layer 4. A current injection region 7 is formed in the vertical direction to the direction along the P-N junction face by diffusion of Zn and a high-resistance region 10 irradiated with proton is formed at the central part of the region 7. Light generated in the active layer 4 propagates in the parallel direction to the belt-shaped current injection region 7, but as the central part is high resistive and has not been injected current, the single longitudinal-mode oscillation is always obtained in low noises.
申请公布号 JPS6052078(A) 申请公布日期 1985.03.23
申请号 JP19830161306 申请日期 1983.09.01
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TAJIRI FUMIKO;SHIMIZU YUUICHI;ITOU KUNIO;WADA MASARU;HAMADA TAKESHI;KUME MASAHIRO
分类号 H01S5/00;H01S5/10;H01S5/20;H01S5/223 主分类号 H01S5/00
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