| 摘要 |
PURPOSE:To obtain a highly reliable thermal head eliminating poor grounding by forming an insulator by sputtering method with a heat generating resistor and/or a conductive metal wire held at an earth potential. CONSTITUTION:An undercoat film 2 is formed entirely on an alumina substrate 1 as insulating substrate and then, a 0.1mum thick heat generating resistor 3 made of a Cr-Si alloy and a 1.5mum Al conductors 4 and 6 are formed in a specified pattern. Then, an auxiliary electrode terminal 8 is formed in a specified pattern. The substrate 12 thus laminated and patterned is set on a sputtering device 9 and SiO2 as insulator 5 is formed at the thickness of about 3.5mum by sputtering method. In addition, Si3N4 is formed at the thickness of 1.0-2.0mum by plasma CVD method thereon and a contact through hole is formed in the Si3N4/SiO2 double-layer film. |
