| 摘要 |
PURPOSE:To form an ohmic contact, to enable the formation of a wiring material effective for obstructing the breaking of a junction and to improve the characteristics of a semiconductor by using metal laminated films consisting of aluminum and titanium nitride as wiring layers. CONSTITUTION:Wiring layers 26 consisting of five layer films are formed on a substrate in order of Al 21, Al+TiN 22, TiN 23, Al+TiN 24 and -Al 25 through a sputtering method. An emitter electrode 27, a base electrode 28 and a collector electrode 29 are formed by removing the wiring layers 26 shaped in this manner through etching while leaving electrodes and wiring layers through a photo-resist process. Consequently, ohmic contacts can be formed by the Al layers of the wiring layers 26 in the interfaces of each electrode being in contact with an Si layer in the substrate, and barrier effects are displayed by TiN layers. Accordingly, a reaction between Al and Si is obstructed against heat treatment repeated to the substrate while the manufacture is effective for the migration-resistance of a bipolar device having high electric current density. |
