| 摘要 |
PURPOSE:To hold the potential of a substrate at the ground potential in a semiconductor integrated circuit having no self-bias by implanting impurity ions in a field inversion preventing layer and a substrate region directly under a contacting hole for grounding the substrate. CONSTITUTION:In a semiconductor device in which a P<-> type field inversion preventing layer 22 is formed by ion implanting on a P type silicon semiconductor substrate 21 and a source region 23, an SiO2 film 24, a CVD SiO2 film 25, a BAG film 26, a grounding contacting hole 12, and an aluminum layer 11 are formed, a P<--> type layer 27 is formed by ion implanting on the regions of the layer 22 and the substrate 32 directly under the hole 12. Since the layer 27 has higher impurity density than the layer 22 and smaller resistance value, the substrate 21 can be maintained at the ground potential even when a large current is flowed to the integrated circuit. |
