| 摘要 |
PURPOSE:To obtain the flatness same as that of other main chip and form a pattern of semiconductor device of the dielectric isolation structure by forming the positioning pattern of mask and substrate as the pattern image for monitor formed like the lattice. CONSTITUTION:A monitor chip 23 is formed at the center and periphery of a substrate 21 and a mask 22 and a pattern image is formed like a lattice on the monitor chip 23. Thereby, the flatness similar to that of the other main chip 24 can be obtained at the time of lap grinding to be conducted to the main surface of substrate 21. Separation from the main chip 24 can be done easily by employing the pattern image like the lattice and accuracy can also be improved by laminating the pattern like the lattice. Usually, about 10 sheets of reticles or masks are stacked on the wafer in order to form a device with a high density on the substrate 21. A severe accuracy is required for such stacking. With such requirement, in the case of the photolithography, the alignment of a more precise ultraminiature pattern can be formed on the substrate 21 by improving the positioning accuracy. |
