| 摘要 |
PURPOSE:To suppress a shortcircuit between wiring layers of multilayer wiring structure by forming slits on the first wiring layer of the portion in which the first and second wiring layers cross with each other. CONSTITUTION:The first wiring layer 3 having slits 2 is formed on a semiconductor substrate 1. An insulating layer 4 is formed, and the second wiring layer 5 is formed in a perpendicular direction to the first wiring layer to be superposed on the slits 2. Since the density and the height of hillock generated and grown in the steps including heat treating after forming the layer 3 are smaller than those of the first wiring layer not formed with the slits 2, a shortcircuit between the wiring layers may be suppressed. |
