| 摘要 |
PURPOSE:To enable to obtain the pattern of a semiconductor layer according to the processes of the minimum number by a method wherein a high-energy particle beam is irradiated to the semiconductor layer to convert crystallizability thereof, and only the region thereof or a region other than that is removed selectively. CONSTITUTION:A single crystal Si layer 2 is formed on a substrate 1. Then a picosecond pulse beam 3 of mode locked Nd-YAG laser is projected to the arbitrary regions of the layer 2. The irradiated regions are converted into amorphous Si layers 4 attending on irradiation thereof. Then when the sample thereof is immersed in the mixed liquid of an aqueous solution of sodium dichromate and hydrofluoric acid, the layers 4 only are removed selectively, and a pattern 5 of single crystal Si is formed. Moreover, irradiation of a high-energy particle beam having pulse length of the picosecond order also can be used favorably in place of the picosecond pulse laser beam, and moreover in regard to removal of the amorphous layer, a solution or a vapor phase having the large ratio of the etching rates of single crystal Si and amorphous Si also can be used favorably. |
