| 摘要 |
PURPOSE:To obtain the semiconductor device of electrode structure having an ohmic contact by a method wherein a high density impurity region is formed on the interfacial region of the semiconductor base layer which comes in contact with an electrode. CONSTITUTION:A contact compensation region 43 is formed on the electrode forming region located on the surface of a p type region 42 by selectively and shallowly introducing high density of boron into an n type silicon substrate 41. An insulating film 44, a titanium nitride layer 45, and an aluminum/silicon layer 46 are coated, and a wiring and an electrode having aluminum as the principal ingredient are formed by performing a patterning. When the boron density of the contact compensation boron containing region 43 is low, a voltage-current line has a non-linear form, which is non-ohmic contact in other words, but as the boron density becomes higher, said line is turned into a linear form, thereby enabling to obtain an ohmic contact. |
